digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130128 s2800 series silicon controlled rectifier available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive forward and reverse blocking voltage (1) (t j = 25 to 100c, gate open) s2800f s2800a s2800b S2800D s2800m s2800n v rrm , v drm 50 100 200 400 600 800 volts peak non-repetitive reverse voltage and non-repetitive off-state voltage (1) (t j = 25 to 100c, gate open) s2800f s2800a s2800b S2800D s2800m s2800n v rsm , v dsm 75 125 250 500 700 900 volts forward on-state current rms (all conduction angles), t c = 75c i t(rms) 10 amps peak forward surge current (one cycle, sine wave, 60hz, t c = 80c) i tsm 100 amps circuit fusing considerations (t = 8.3ms) i 2 t 40 a 2 s forward peak gate power (t 10s) p gm 16 watts forward average gate power p g(av) 0.5 watts operating junction temperature range t j -40 to +100 c storage temperature range t stg -40 to +150 c note 1: v drm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate vo ltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltag e ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min. typ. max. unit peak forward or reverse blocking current (v ak = v drm or v rrm , gate open) t c = 25c t c = 100c i drm - - - - 10 2 a ma instantaneous on-state voltage (i tm = 30a peak, pulse width 1ms, duty cycle 2%) v t - 1.7 2 volts gate trigger current (continuous dc) (v d = 12v, r l = 30 ? ) i gt - 8 15 ma gate trigger voltage (continuous dc) (v d = 12v, r l = 30 ? ) v gt - 0.9 1.5 volts holding current (v d = 12v, gate open, i t = 150ma) i h - 10 20 ma gate controlled turn-on time (v d = rated v drm , i tm = 2a, i gr = 80ma) t gt - 1.6 - s
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 s2800 series silicon controlled rectifier characteristic symbol min. typ. max. unit circuit commutated turn-off time (v d = v drm , i tm = 2a, pulse width 50s, dv/dt = 200v/s, di/dt = 10a/s, t c = 75c ) t q - 25 - s critical rate of rise of off-state voltage (v d = rated v drm , exponential rise, t c = 100c) dv/dt - 100 - v/s mechanical characteristics case to-220ab marking body painted, alpha-numeric pin out see below to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130128
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 s2800 series silicon controlled rectifier fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130128
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